IPD160N04L G 全国供应商、价格、PDF资料
IPD160N04L G详细规格
- 类别:FET - 单
- 描述:MOSFET N-CH 40V 30A TO252-3
- 系列:OptiMOS™
- 制造商:Infineon Technologies
- FET型:MOSFET N 通道,金属氧化物
- FET特点:逻辑电平门
- 漏极至源极电压333Vdss444:40V
- 电流_连续漏极333Id4440a025000C:30A
- 开态Rds(最大)0a0IdwwwwVgs0a025000C:16 毫欧 @ 30A,10V
- Id时的Vgs333th444(最大):2V @ 10µA
- 闸电荷333Qg4440a0Vgs:15nC @ 10V
- 输入电容333Ciss4440a0Vds:1200pF @ 20V
- 功率_最大:31W
- 安装类型:表面贴装
- 封装/外壳:TO-252-3,DPak(2 引线+接片),SC-63
- 供应商设备封装:PG-TO252-3
- 包装:带卷 (TR)
- 逻辑 - 触发器 IDT, Integrated Device Technology Inc 20-SSOP(0.154",3.90mm 宽) IC REGISTER OCTAL D 3ST 20-QSOP
- 逻辑 - FIFO IDT, Integrated Device Technology Inc 80-LQFP IC FIFO 16384X18 6NS 80QFP
- PMIC - 电压基准 Texas Instruments SC-74A,SOT-753 IC VREF SHUNT PREC 5V SOT-23-5
- FET - 单 Infineon Technologies TO-252-3,DPak(2 引线+接片),SC-63 MOSFET N-CH 55V 17A TO252-3
- Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps Fairchild Semiconductor 8-SOIC(0.154",3.90mm 宽) IC OPAMP DUAL 0-70DEG C 8-SOIC
- 存储器 IDT, Integrated Device Technology Inc 64-LQFP IC SRAM 128KBIT 55NS 64TQFP
- 时钟/计时 - 时钟发生器,PLL,频率合成器 IDT, Integrated Device Technology Inc 8-SOIC(0.154",3.90mm 宽) IC VCXO HI PERF 8-SOIC
- Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps Texas Instruments 8-SOIC(0.154",3.90mm 宽) IC AMP HS VOLT FEEDBACK 8-SOIC
- 逻辑 - FIFO IDT, Integrated Device Technology Inc 100-LBGA IC FIFO 16384X18 7-5NS 100BGA
- 评估板 - LED 驱动器 Texas Instruments 8-WFDFN 裸露焊盘 BOARD EVALUATION LM3414HVSD
- Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps Texas Instruments * IC OP AMP DUAL LOW PWR 8-SOIC
- 存储器 IDT, Integrated Device Technology Inc 80-LQFP IC SRAM 256KBIT 35NS 80TQFP
- Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps Texas Instruments 8-SOIC(0.154",3.90mm 宽) IC AMP HS VOLT FEEDBACK 8-SOIC
- 时钟/计时 - 时钟发生器,PLL,频率合成器 IDT, Integrated Device Technology Inc 8-SOIC(0.154",3.90mm 宽) IC PC PERIPHERAL CLOCK 8-SOIC
- 逻辑 - FIFO IDT, Integrated Device Technology Inc 100-LBGA IC FIFO 16384X18 7-5NS 100BGA